irf634b/IRFS634B irf634b/IRFS634B 250v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters and switch mode power supplies. features ? 8.1a, 250v, r ds(on) = 0.45 ? @v gs = 10 v ? low gate charge ( typical 29 nc) ? low crss ( typical 20 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter irf634b IRFS634B units v dss drain-source voltage 250 v i d drain current - continuous (t c = 25c) 8.1 8.1 * a - continuous (t c = 100c) 5.1 5.1 * a i dm drain current - pulsed (note 1) 32.4 32.4 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 200 mj i ar avalanche current (note 1) 8.1 a e ar repetitive avalanche energy (note 1) 7.4 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 74 38 w - derate above 25c 0.59 0.3 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter irf634b IRFS634B units r jc thermal resistance, junction-to-case max. 1.69 3.29 c / w r cs thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient max. 62.5 62.5 c / w to-220 irf series g s d s d g to-220f irfs series g s d www.kersemi.com
irf634b/IRFS634B (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 4.9mh, i as = 8.1a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 8.1a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.27 -- v/c i dss zero gate voltage drain current v ds = 250 v, v gs = 0 v -- -- 10 a v ds = 200 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.05 a -- 0.345 0.45 ? g fs forward transconductance v ds = 40 v, i d = 4.05 a -- 7.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 780 1000 pf c oss output capacitance -- 95 125 pf c rss reverse transfer capacitance -- 20 25 pf switching characteristics t d(on) turn-on delay time v dd = 125 v, i d = 8.1 a, r g = 25 ? -- 15 40 ns t r turn-on rise time -- 75 160 ns t d(off) turn-off delay time -- 100 210 ns t f turn-off fall time -- 65 140 ns q g total gate charge v ds = 200 v, i d = 8.1 a, v gs = 10 v -- 29 38 nc q gs gate-source charge -- 4.2 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 8.1 a i sm maximum pulsed drain-source diode forward current -- -- 32.4 a v sd drain-source diode forward voltage v gs = 0 v, i s = 8.1 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 8.1 a, di f / dt = 100 a/ s -- 170 -- ns q rr reverse recovery charge -- 0.91 -- c www.kersemi.com
irf634b/IRFS634B 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v ! note : i d = 8.1 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 2000 c oss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd ! notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 150 " ! notes : 1. v gs = 0v 2. 250 # s pulse test 25 " i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v ! note : t j = 25 " r ds(on) [ $ ], drain-source on-resistance i d , drain current [a] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c ! notes : 1. v ds = 40v 2. 250 # s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v ! notes : 1. 250 # s pulse test 2. t c = 25 " i d , drain current [a] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics www.kersemi.com
irf634b/IRFS634B 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 s 1 ms dc 100 ms 10 ms operation in this area is limited by r ds(on) ! notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ " ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) ! notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ! notes : 1. v gs = 10 v 2. i d = 4.05 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ! notes : 1. v gs = 0 v 2. i d = 250 # a bv dss , (normalized) drain-source breakdown vol tage t j , junction temperature [ o c] typical characteristics figure 9-1. maximum safe operating area for irf634b figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-2. maximum safe operating area for IRFS634B www.kersemi.com
irf634b/IRFS634B typical characteristics 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ! notes : 1. z % jc (t) = 1.69 " /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z % jc (t) sin g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z % jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for irf634b t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ! notes : 1. z % jc (t) = 3.29 " /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z % jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z % jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] figure 11-2. transient thermal response curve for IRFS634B t 1 p dm t 2 www.kersemi.com
irf634b/IRFS634B charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms www.kersemi.com
irf634b/IRFS634B peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- www.kersemi.com
irf634b/IRFS634B package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 www.kersemi.com
irf634b/IRFS634B package dimensions (7.00) (0.70) max1.47 (30 3.18 0.05 to-220f www.kersemi.com
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